英语翻译This is also true for hole transport if the two valence band tops are close in energy or aligned.Based on the above fact an overall generic operating concept for the design of high ZT thermoelectrics has emerged which is shown in Fig.8.Th

英语翻译This is also true for hole transport if the two valence band tops are close in energy or aligned.Based on the above fact an overall generic operating concept for the design of high ZT thermoelectrics has emerged which is shown in Fig.8.Th
英语翻译
This is also true for hole transport if the two valence band tops are close in energy or aligned.
Based on the above fact an overall generic operating concept for the design of high ZT thermoelectrics has emerged which is shown in Fig.8.The matrix phases and second phase may show
large differences in semiconducting band gap,however,the carriers can easily transport if there is a small energy difference（DE) in the relevant valence or conduction band edges.This energy difference should be comparable to the magnitude of thermal energy at elevated temperatures of kBT,here kB is the
Boltzmann constant and T is the absolute temperature.15
A system where heat flow can be greatly inhibited without affecting the carrier mobility is found in p-type PbTe with endotaxial SrTe nanocrystals.The relative observed insensitivity of hole scattering is attributed to favorable valence band alignment of SrTe and PbTe with 1%Na2Te.

英语翻译This is also true for hole transport if the two valence band tops are close in energy or aligned.Based on the above fact an overall generic operating concept for the design of high ZT thermoelectrics has emerged which is shown in Fig.8.Th
人工翻译,请审阅
如果2价带顶在能量上是接近的或对准的,这也适用于空穴传输.基于上述事实,对于高ZT的热电材料的设计来说,已经出现了一个总的通用操作概念,它示于图8.基体相和第二相在半导电带隙上可以显示大的差异,但是,如果在相关价或导带边缘上存在小的能量差（DE）,那么载流子可以很容易地传输.这个能量差应该相当于热能在kBT的高温下的大小,这里KB是玻尔兹曼常数,T是绝对温度[15].在具有内延SrTe纳米晶体的n型PeTe中,可以发现一个热流量可极大地被抑制的系统.空穴分散的观察到的相对不敏感性归因于带有1% Na2Te的SrTe和PbTe的有利的价带对准.

所以这是一个为运输孔的价带的顶部，如果是关闭的能源或对准。基于上述事实，在通用设计概念的整体操作和高热电材料的ZT是安切洛蒂出现显示在图8。第二阶段的矩阵和相位差异可能showlarge semiconducting带帽，不容易运输，承运人可以有一个小的能量差分IF（德）在有关价或传导带边缘。这一状态的能量差应发生在高架温度热能量kBT，这里是theboltzmann常数KB和T是绝对temper...

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所以这是一个为运输孔的价带的顶部，如果是关闭的能源或对准。基于上述事实，在通用设计概念的整体操作和高热电材料的ZT是安切洛蒂出现显示在图8。第二阶段的矩阵和相位差异可能showlarge semiconducting带帽，不容易运输，承运人可以有一个小的能量差分IF（德）在有关价或传导带边缘。这一状态的能量差应发生在高架温度热能量kBT，这里是theboltzmann常数KB和T是绝对temperature.15 A系统在热流量可以大大抑制了载流子迁移率是没有影响的P型碲化铅和endotaxial srte nanocrystals。观察到的相对insensitivity of孔是被散射到有利的价带和srte对准na2te PbTe和1%。

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